ON Semiconductor FDD306P
- FDD306P
- ON Semiconductor
- MOSFET P-CH 12V 6.7A TO252
- Transistors - FETs, MOSFETs - Single
- FDD306P Datasheet
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Cut Tape (CT)
- Lead free / RoHS Compliant
- 22239
- Spot Inventory / Athorized Dstributor / Factory Excess Stock
- 1 year quality assurance 》
- Click to get rates
Part Number FDD306P |
Category Transistors - FETs, MOSFETs - Single |
Manufacturer ON Semiconductor |
Description MOSFET P-CH 12V 6.7A TO252 |
Package Cut Tape (CT) |
Series PowerTrench® |
Operating Temperature -55°C ~ 175°C (TJ) |
Mounting Type Surface Mount |
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63 |
Supplier Device Package TO-252AA |
Technology MOSFET (Metal Oxide) |
Power Dissipation (Max) 52W (Ta) |
FET Type P-Channel |
FET Feature - |
Drain to Source Voltage (Vdss) 12 V |
Current - Continuous Drain (Id) @ 25°C 6.7A (Ta) |
Rds On (Max) @ Id, Vgs 28mOhm @ 6.7A, 4.5V |
Vgs(th) (Max) @ Id 1.5V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs 21 nC @ 4.5 V |
Input Capacitance (Ciss) (Max) @ Vds 1290 pF @ 6 V |
Vgs (Max) ±8V |
Drive Voltage (Max Rds On, Min Rds On) 1.8V, 4.5V |
Package_case TO-252-3, DPak (2 Leads + Tab), SC-63 |
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