FDD850N10L

Fairchild Semiconductor FDD850N10L

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  • FDD850N10L
  • Fairchild Semiconductor
  • POWER FIELD-EFFECT TRANSISTOR, 1
  • Transistors - FETs, MOSFETs - Single
  • FDD850N10L Datasheet
  • TO-252-3, DPak (2 Leads + Tab), SC-63
  • Bulk
  • Lead free / RoHS CompliantLead free / RoHS Compliant
  • 3062
  • Spot Inventory / Athorized Dstributor / Factory Excess Stock
  • 1 year quality assurance 》
  • Click to get rates
Part Number
FDD850N10L
Category
Transistors - FETs, MOSFETs - Single
Manufacturer
Fairchild Semiconductor
Description
POWER FIELD-EFFECT TRANSISTOR, 1
Package
Bulk
Series
PowerTrench®
Operating Temperature
-55°C ~ 175°C (TJ)
Mounting Type
Surface Mount
Package / Case
TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package
TO-252AA
Technology
MOSFET (Metal Oxide)
Power Dissipation (Max)
50W (Tc)
FET Type
N-Channel
FET Feature
-
Drain to Source Voltage (Vdss)
100 V
Current - Continuous Drain (Id) @ 25°C
15.7A (Tc)
Rds On (Max) @ Id, Vgs
75mOhm @ 12A, 10V
Vgs(th) (Max) @ Id
2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
28.9 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds
1.465 pF @ 25 V
Vgs (Max)
±20V
Drive Voltage (Max Rds On, Min Rds On)
5V, 10V
Package_case
TO-252-3, DPak (2 Leads + Tab), SC-63

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Fairchild Semiconductor
Fairchild Semiconductor
Fairchild is now part of ON Semiconductor Together, we deliver a more extensive product portfolio of power discretes, ICs and power modules, plus a complete offering of low, mid and high voltage products ...
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