Infineon Technologies FF650R17IE4PBOSA1
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- FF650R17IE4PBOSA1
- Infineon Technologies
- IGBT MODULE 1700V 650A
- Transistors - Bipolar (BJT) - Single
- FF650R17IE4PBOSA1 Datasheet
- Module
- Tray
-
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What is FF650R17IE4PBOSA1
Infineon Technologies Part Number FF650R17IE4PBOSA1（Transistors - Bipolar (BJT) - Single）, developed and manufactured by Infineon Technologies, distributed globally by Jinftry. We distribute various electronic components from world-renowned brands and provide one-stop services, making us a trusted global electronic component distributor.
FF650R17IE4PBOSA1 is one of the part numbers distributed by Jinftry, and you can learn about its specifications/configurations, package/case, Datasheet, and other information here. Electronic components are affected by supply and demand, and prices fluctuate frequently. If you have a demand, please do not hesitate to send us an RFQ or email us immediately [email protected] Please inquire about the real-time unit price, Data Code, Lead time, payment terms, and any other information you would like to know. We will do our best to provide you with a quotation and reply as soon as possible.
FF650R17IE4PBOSA1 Specifications
- Part NumberFF650R17IE4PBOSA1
- CategoryTransistors - Bipolar (BJT) - Single
- ManufacturerInfineon Technologies
- DescriptionIGBT MODULE 1700V 650A
- PackageTray
- Series-
- Operating Temperature-40°C ~ 150°C
- Mounting TypeChassis Mount
- Package / CaseModule
- Supplier Device PackageModule
- Power - Max-
- Configuration2 Independent
- Current - Collector (Ic) (Max)650 A
- Voltage - Collector Emitter Breakdown (Max)1700 V
- Current - Collector Cutoff (Max)5 mA
- IGBT TypeTrench Field Stop
- Vce(on) (Max) @ Vge, Ic2.45V @ 15V, 650A
- Input Capacitance (Cies) @ Vce54 nF @ 25 V
- InputStandard
- NTC ThermistorYes
Application of FF650R17IE4PBOSA1
FF650R17IE4PBOSA1 Datasheet
FF650R17IE4PBOSA1 Datasheet , Tray,-40°C ~ 150°C,Chassis Mount,Module,Module,2 Independent,650 A,1700 V,5 mA,Trench Field Stop,2.45V @ 15V, 650A,54 nF @ 25 V,Standard,Yes
FF650R17IE4PBOSA1 Classification
Transistors - Bipolar (BJT) - Single
FAQ about Transistors - Bipolar (BJT) - Single
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1. What is the difference between bipolar transistors and CMOS transistors?
The main differences between bipolar transistors and CMOS transistors are in working principles, structures, application scenarios, and power consumption.
Working principle
Bipolar transistor: Bipolar transistors have two types of carriers (holes and electrons) involved in conduction, and they are made of three parts of semiconductors with different doping levels. In bipolar transistors, the emitter emits free electrons, the collector receives holes, and the base controls the on and off of the current.
CMOS transistor: CMOS transistors have only one type of carrier (electrons or holes) involved in conduction, usually using a combination of P-type semiconductors and N-type semiconductors. In CMOS transistors, when the gate voltage is zero, the current does not flow. Only when the gate voltage reaches a certain value, the current will flow, which makes the CMOS transistor consume almost no power when static.
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2. Is PNP transistor bipolar?
PNP transistor is a bipolar transistor. PNP transistor is a bipolar transistor used in electronic circuits to amplify, switch and control current. Its name "PNP" represents the three different semiconductor regions in its structure: two positive poles (P type) and one negative pole (N type).
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3. Are bipolar transistors still in use?
Bipolar transistors are still in use and play an important role in many fields. Bipolar transistors, the full name of which is bipolar junction transistor (BJT), commonly known as triode, are electronic devices with three terminals, made of three parts of semiconductors with different doping levels. Its working principle involves the flow of two carriers, electrons and holes, so it is called bipolar.
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