ON Semiconductor FGA30N120FTDTU
- FGA30N120FTDTU
- ON Semiconductor
- IGBT 1200V 60A 339W TO3P
- Transistors - IGBTs - Single
- FGA30N120FTDTU Datasheet
- TO-3P-3, SC-65-3
- Tube
- Lead free / RoHS Compliant
- 2813
- Spot Inventory / Athorized Dstributor / Factory Excess Stock
- 1 year quality assurance 》
- Click to get rates
Part Number FGA30N120FTDTU |
Category Transistors - IGBTs - Single |
Manufacturer ON Semiconductor |
Description IGBT 1200V 60A 339W TO3P |
Package Tube |
Series - |
Operating Temperature -55°C ~ 150°C (TJ) |
Mounting Type Through Hole |
Package / Case TO-3P-3, SC-65-3 |
Supplier Device Package TO-3PN |
Power - Max 339 W |
Input Type Standard |
Reverse Recovery Time (trr) 730 ns |
Current - Collector (Ic) (Max) 60 A |
Voltage - Collector Emitter Breakdown (Max) 1200 V |
IGBT Type Trench Field Stop |
Vce(on) (Max) @ Vge, Ic 2V @ 15V, 30A |
Gate Charge 208 nC |
Td (on/off) @ 25°C - |
Test Condition - |
Current - Collector Pulsed (Icm) 90 A |
Switching Energy - |
Package_case TO-3P-3, SC-65-3 |
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