Fairchild Semiconductor FGH30T65UPDT_F155
- FGH30T65UPDT_F155
- Fairchild Semiconductor
- INSULATED GATE BIPOLAR TRANSISTO
- Transistors - IGBTs - Single
- FGH30T65UPDT_F155 Datasheet
- TO-247-3
- Bulk
- Lead free / RoHS Compliant
- 12219
- Spot Inventory / Athorized Dstributor / Factory Excess Stock
- 1 year quality assurance 》
- Click to get rates
Part Number FGH30T65UPDT_F155 |
Category Transistors - IGBTs - Single |
Manufacturer Fairchild Semiconductor |
Description INSULATED GATE BIPOLAR TRANSISTO |
Package Bulk |
Series - |
Operating Temperature -55°C ~ 175°C (TJ) |
Mounting Type Through Hole |
Package / Case TO-247-3 |
Supplier Device Package TO-247-3 |
Power - Max 250 W |
Input Type Standard |
Reverse Recovery Time (trr) 33 ns |
Current - Collector (Ic) (Max) 60 A |
Voltage - Collector Emitter Breakdown (Max) 650 V |
IGBT Type Trench Field Stop |
Vce(on) (Max) @ Vge, Ic 2.3V @ 15V, 30A |
Gate Charge 155 nC |
Td (on/off) @ 25°C 22ns/139ns |
Test Condition 400V, 30A, 8Ohm, 15V |
Current - Collector Pulsed (Icm) 90 A |
Switching Energy 760µJ (on), 400µJ (off) |
Package_case TO-247-3 |
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