FII30-12E

IXYS FII30-12E

The picture is for reference only, please refer to the product specification

  • FII30-12E
  • IXYS
  • IGBT H BRIDGE 1200V 33A I4PAK5
  • Transistors - IGBTs - Arrays
  • FII30-12E Datasheet
  • i4-Pac™-5
  • Tube
  • Lead free / RoHS CompliantLead free / RoHS Compliant
  • 2645
  • Spot Inventory / Athorized Dstributor / Factory Excess Stock
  • 1 year quality assurance 》
  • Click to get rates
Part Number
FII30-12E
Category
Transistors - IGBTs - Arrays
Manufacturer
IXYS
Description
IGBT H BRIDGE 1200V 33A I4PAK5
Package
Tube
Series
-
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Through Hole
Package / Case
i4-Pac™-5
Supplier Device Package
ISOPLUS i4-PAC™
Power - Max
150 W
Configuration
Half Bridge
Current - Collector (Ic) (Max)
33 A
Voltage - Collector Emitter Breakdown (Max)
1200 V
Current - Collector Cutoff (Max)
200 µA
IGBT Type
NPT
Vce(on) (Max) @ Vge, Ic
2.9V @ 15V, 20A
Input Capacitance (Cies) @ Vce
1.2 nF @ 25 V
Input
Standard
NTC Thermistor
No
Package_case
i4-Pac™-5

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IXYS
IXYS
IXYS Corporation is a global supplier of power management semiconductors with a comprehensive range of Power MOSFET, IGBT, bipolar, and mixed-signal IC solutions that provide improved efficiency and reduced energy costs in a ...
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