Fairchild Semiconductor FQD2N60CTM
- FQD2N60CTM
- Fairchild Semiconductor
- POWER FIELD-EFFECT TRANSISTOR, 1
- Transistors - FETs, MOSFETs - Single
- FQD2N60CTM Datasheet
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Tape & Reel (TR)
- Lead free / RoHS Compliant
- 2518
- Spot Inventory / Athorized Dstributor / Factory Excess Stock
- 1 year quality assurance 》
- Click to get rates
Part Number FQD2N60CTM |
Category Transistors - FETs, MOSFETs - Single |
Manufacturer Fairchild Semiconductor |
Description POWER FIELD-EFFECT TRANSISTOR, 1 |
Package Tape & Reel (TR) |
Series QFET® |
Operating Temperature -55°C ~ 150°C (TJ) |
Mounting Type Surface Mount |
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63 |
Supplier Device Package TO-252AA |
Technology MOSFET (Metal Oxide) |
Power Dissipation (Max) 2.5W (Ta), 44W (Tc) |
FET Type N-Channel |
FET Feature - |
Drain to Source Voltage (Vdss) 600 V |
Current - Continuous Drain (Id) @ 25°C 1.9A (Tc) |
Rds On (Max) @ Id, Vgs 4.7Ohm @ 950mA, 10V |
Vgs(th) (Max) @ Id 4V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs 12 nC @ 10 V |
Input Capacitance (Ciss) (Max) @ Vds 235 pF @ 25 V |
Vgs (Max) ±30V |
Drive Voltage (Max Rds On, Min Rds On) 10V |
Package_case TO-252-3, DPak (2 Leads + Tab), SC-63 |
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