FQU2N60CTU

Fairchild Semiconductor FQU2N60CTU

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  • FQU2N60CTU
  • Fairchild Semiconductor
  • POWER FIELD-EFFECT TRANSISTOR, 1
  • Transistors - FETs, MOSFETs - Single
  • FQU2N60CTU Datasheet
  • TO-251-3 Short Leads, IPak, TO-251AA
  • Bulk
  • Lead free / RoHS CompliantLead free / RoHS Compliant
  • 28869
  • Spot Inventory / Athorized Dstributor / Factory Excess Stock
  • 1 year quality assurance 》
  • Click to get rates
Part Number
FQU2N60CTU
Category
Transistors - FETs, MOSFETs - Single
Manufacturer
Fairchild Semiconductor
Description
POWER FIELD-EFFECT TRANSISTOR, 1
Package
Bulk
Series
QFET®
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Through Hole
Package / Case
TO-251-3 Short Leads, IPak, TO-251AA
Supplier Device Package
I-PAK
Technology
MOSFET (Metal Oxide)
Power Dissipation (Max)
2.5W (Ta), 44W (Tc)
FET Type
N-Channel
FET Feature
-
Drain to Source Voltage (Vdss)
600 V
Current - Continuous Drain (Id) @ 25°C
1.9A (Tc)
Rds On (Max) @ Id, Vgs
4.7Ohm @ 950mA, 10V
Vgs(th) (Max) @ Id
4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
12 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds
235 pF @ 25 V
Vgs (Max)
±30V
Drive Voltage (Max Rds On, Min Rds On)
10V
Package_case
TO-251-3 Short Leads, IPak, TO-251AA

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Fairchild Semiconductor
Fairchild Semiconductor
Fairchild is now part of ON Semiconductor Together, we deliver a more extensive product portfolio of power discretes, ICs and power modules, plus a complete offering of low, mid and high voltage products ...
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