Fairchild Semiconductor FQU2N60CTU
- FQU2N60CTU
- Fairchild Semiconductor
- POWER FIELD-EFFECT TRANSISTOR, 1
- Transistors - FETs, MOSFETs - Single
- FQU2N60CTU Datasheet
- TO-251-3 Short Leads, IPak, TO-251AA
- Bulk
- Lead free / RoHS Compliant
- 28869
- Spot Inventory / Athorized Dstributor / Factory Excess Stock
- 1 year quality assurance 》
- Click to get rates
Part Number FQU2N60CTU |
Category Transistors - FETs, MOSFETs - Single |
Manufacturer Fairchild Semiconductor |
Description POWER FIELD-EFFECT TRANSISTOR, 1 |
Package Bulk |
Series QFET® |
Operating Temperature -55°C ~ 150°C (TJ) |
Mounting Type Through Hole |
Package / Case TO-251-3 Short Leads, IPak, TO-251AA |
Supplier Device Package I-PAK |
Technology MOSFET (Metal Oxide) |
Power Dissipation (Max) 2.5W (Ta), 44W (Tc) |
FET Type N-Channel |
FET Feature - |
Drain to Source Voltage (Vdss) 600 V |
Current - Continuous Drain (Id) @ 25°C 1.9A (Tc) |
Rds On (Max) @ Id, Vgs 4.7Ohm @ 950mA, 10V |
Vgs(th) (Max) @ Id 4V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs 12 nC @ 10 V |
Input Capacitance (Ciss) (Max) @ Vds 235 pF @ 25 V |
Vgs (Max) ±30V |
Drive Voltage (Max Rds On, Min Rds On) 10V |
Package_case TO-251-3 Short Leads, IPak, TO-251AA |
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