G3R160MT17D

GeneSiC Semiconductor G3R160MT17D

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  • G3R160MT17D
  • GeneSiC Semiconductor
  • SIC MOSFET N-CH 21A TO247-3
  • Transistors - FETs, MOSFETs - Single
  • G3R160MT17D Datasheet
  • TO-247-3
  • Tube
  • Lead free / RoHS CompliantLead free / RoHS Compliant
  • 2498
  • Spot Inventory / Athorized Dstributor / Factory Excess Stock
  • 1 year quality assurance 》
  • Click to get rates
Part Number
G3R160MT17D
Category
Transistors - FETs, MOSFETs - Single
Manufacturer
GeneSiC Semiconductor
Description
SIC MOSFET N-CH 21A TO247-3
Package
Tube
Series
G3R™
Operating Temperature
-55°C ~ 175°C (TJ)
Mounting Type
Through Hole
Package / Case
TO-247-3
Supplier Device Package
TO-247-3
Technology
SiCFET (Silicon Carbide)
Power Dissipation (Max)
175W (Tc)
FET Type
N-Channel
FET Feature
-
Drain to Source Voltage (Vdss)
1700 V
Current - Continuous Drain (Id) @ 25°C
21A (Tc)
Rds On (Max) @ Id, Vgs
208mOhm @ 12A, 15V
Vgs(th) (Max) @ Id
2.7V @ 5mA
Gate Charge (Qg) (Max) @ Vgs
51 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds
1272 pF @ 1000 V
Vgs (Max)
±15V
Drive Voltage (Max Rds On, Min Rds On)
15V
Package_case
TO-247-3

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