G3R20MT12N

GeneSiC Semiconductor G3R20MT12N

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  • G3R20MT12N
  • GeneSiC Semiconductor
  • SIC MOSFET N-CH 105A SOT227
  • Transistors - FETs, MOSFETs - Single
  • G3R20MT12N Datasheet
  • SOT-227-4, miniBLOC
  • Tube
  • Lead free / RoHS CompliantLead free / RoHS Compliant
  • 25032
  • Spot Inventory / Athorized Dstributor / Factory Excess Stock
  • 1 year quality assurance 》
  • Click to get rates
Part Number
G3R20MT12N
Category
Transistors - FETs, MOSFETs - Single
Manufacturer
GeneSiC Semiconductor
Description
SIC MOSFET N-CH 105A SOT227
Package
Tube
Series
G3R™
Operating Temperature
-55°C ~ 175°C (TJ)
Mounting Type
Chassis Mount
Package / Case
SOT-227-4, miniBLOC
Supplier Device Package
SOT-227
Technology
SiCFET (Silicon Carbide)
Power Dissipation (Max)
365W (Tc)
FET Type
N-Channel
FET Feature
-
Drain to Source Voltage (Vdss)
1200 V
Current - Continuous Drain (Id) @ 25°C
105A (Tc)
Rds On (Max) @ Id, Vgs
24mOhm @ 60A, 15V
Vgs(th) (Max) @ Id
2.69V @ 15mA
Gate Charge (Qg) (Max) @ Vgs
219 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds
5873 pF @ 800 V
Vgs (Max)
+20V, -10V
Drive Voltage (Max Rds On, Min Rds On)
15V
Package_case
SOT-227-4, miniBLOC

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