GA05JT12-247

GeneSiC Semiconductor GA05JT12-247

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  • GA05JT12-247
  • GeneSiC Semiconductor
  • TRANS SJT 1200V 5A TO247AB
  • Transistors - FETs, MOSFETs - Single
  • GA05JT12-247 Datasheet
  • TO-247-3
  • Cut Tape (CT)
  • Lead free / RoHS CompliantLead free / RoHS Compliant
  • 2611
  • Spot Inventory / Athorized Dstributor / Factory Excess Stock
  • 1 year quality assurance 》
  • Click to get rates
Part Number
GA05JT12-247
Category
Transistors - FETs, MOSFETs - Single
Manufacturer
GeneSiC Semiconductor
Description
TRANS SJT 1200V 5A TO247AB
Package
Cut Tape (CT)
Series
-
Operating Temperature
175°C (TJ)
Mounting Type
Through Hole
Package / Case
TO-247-3
Supplier Device Package
TO-247AB
Technology
SiC (Silicon Carbide Junction Transistor)
Power Dissipation (Max)
106W (Tc)
FET Type
-
FET Feature
-
Drain to Source Voltage (Vdss)
1200 V
Current - Continuous Drain (Id) @ 25°C
5A (Tc)
Rds On (Max) @ Id, Vgs
280mOhm @ 5A
Vgs(th) (Max) @ Id
-
Gate Charge (Qg) (Max) @ Vgs
-
Input Capacitance (Ciss) (Max) @ Vds
-
Vgs (Max)
-
Drive Voltage (Max Rds On, Min Rds On)
-
Package_case
TO-247-3

GA05JT12-247 Guarantees

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• Prompt Responsiveness

• Guaranteed Quality

• Global Access

• Competitive Market Price

• One-Stop support services of supply chain

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568248857, 827259012, 316249462
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