GAN063-650WSAQ

Nexperia USA Inc. GAN063-650WSAQ

The picture is for reference only, please refer to the product specification

  • GAN063-650WSAQ
  • Nexperia USA Inc.
  • GANFET N-CH 650V 34.5A TO247-3
  • Transistors - FETs, MOSFETs - Single
  • GAN063-650WSAQ Datasheet
  • TO-247-3
  • Tube
  • Lead free / RoHS CompliantLead free / RoHS Compliant
  • 1298
  • Spot Inventory / Athorized Dstributor / Factory Excess Stock
  • 1 year quality assurance 》
  • Click to get rates
Part Number
GAN063-650WSAQ
Category
Transistors - FETs, MOSFETs - Single
Manufacturer
Nexperia USA Inc.
Description
GANFET N-CH 650V 34.5A TO247-3
Package
Tube
Series
Automotive, AEC-Q101
Operating Temperature
-55°C ~ 175°C (TJ)
Mounting Type
Through Hole
Package / Case
TO-247-3
Supplier Device Package
TO-247-3
Technology
GaNFET (Cascode Gallium Nitride FET)
Power Dissipation (Max)
143W (Ta)
FET Type
N-Channel
FET Feature
-
Drain to Source Voltage (Vdss)
650 V
Current - Continuous Drain (Id) @ 25°C
34.5A (Ta)
Rds On (Max) @ Id, Vgs
60mOhm @ 25A, 10V
Vgs(th) (Max) @ Id
4.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs
15 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds
1000 pF @ 400 V
Vgs (Max)
±20V
Drive Voltage (Max Rds On, Min Rds On)
10V
Package_case
TO-247-3

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