GT30J121(Q)

Toshiba Semiconductor and Storage GT30J121(Q)

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  • GT30J121(Q)
  • Toshiba Semiconductor and Storage
  • IGBT 600V 30A 170W TO3PN
  • Transistors - IGBTs - Single
  • GT30J121(Q) Datasheet
  • TO-3P-3, SC-65-3
  • Tube
  • Lead free / RoHS CompliantLead free / RoHS Compliant
  • 3209
  • Spot Inventory / Athorized Dstributor / Factory Excess Stock
  • 1 year quality assurance 》
  • Click to get rates
Part Number
GT30J121(Q)
Category
Transistors - IGBTs - Single
Manufacturer
Toshiba Semiconductor and Storage
Description
IGBT 600V 30A 170W TO3PN
Package
Tube
Series
-
Operating Temperature
-
Mounting Type
Through Hole
Package / Case
TO-3P-3, SC-65-3
Supplier Device Package
TO-3P(N)
Power - Max
170 W
Input Type
Standard
Reverse Recovery Time (trr)
-
Current - Collector (Ic) (Max)
30 A
Voltage - Collector Emitter Breakdown (Max)
600 V
IGBT Type
-
Vce(on) (Max) @ Vge, Ic
2.45V @ 15V, 30A
Gate Charge
-
Td (on/off) @ 25°C
90ns/300ns
Test Condition
300V, 30A, 24Ohm, 15V
Current - Collector Pulsed (Icm)
60 A
Switching Energy
1mJ (on), 800µJ (off)
Package_case
TO-3P-3, SC-65-3

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Toshiba Semiconductor and Storage
Toshiba Semiconductor and Storage
Toshiba Semiconductor and Storage - Toshiba Semiconductor & Storage offers a broad range of enabling technology solutions that allow OEMs, ODMs, CMs and fabless chip companies to develop advanced integrated products for the computing, ...
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