ON Semiconductor HGT1S12N60A4DS
- HGT1S12N60A4DS
- ON Semiconductor
- IGBT 600V 54A 167W D2PAK
- Transistors - IGBTs - Single
- HGT1S12N60A4DS Datasheet
- TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
- Tube
- Lead free / RoHS Compliant
- 713
- Spot Inventory / Athorized Dstributor / Factory Excess Stock
- 1 year quality assurance 》
- Click to get rates
Part Number HGT1S12N60A4DS |
Category Transistors - IGBTs - Single |
Manufacturer ON Semiconductor |
Description IGBT 600V 54A 167W D2PAK |
Package Tube |
Series - |
Operating Temperature -55°C ~ 150°C (TJ) |
Mounting Type Surface Mount |
Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
Supplier Device Package D²PAK (TO-263) |
Power - Max 167 W |
Input Type Standard |
Reverse Recovery Time (trr) 30 ns |
Current - Collector (Ic) (Max) 54 A |
Voltage - Collector Emitter Breakdown (Max) 600 V |
IGBT Type - |
Vce(on) (Max) @ Vge, Ic 2.7V @ 15V, 12A |
Gate Charge 78 nC |
Td (on/off) @ 25°C 17ns/96ns |
Test Condition 390V, 12A, 10Ohm, 15V |
Current - Collector Pulsed (Icm) 96 A |
Switching Energy 55µJ (on), 50µJ (off) |
Package_case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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