Fairchild Semiconductor HGTG27N120BN
- HGTG27N120BN
- Fairchild Semiconductor
- INSULATED GATE BIPOLAR TRANSISTO
- Transistors - IGBTs - Single
- HGTG27N120BN Datasheet
- TO-247-3
- Bulk
- Lead free / RoHS Compliant
- 4261
- Spot Inventory / Athorized Dstributor / Factory Excess Stock
- 1 year quality assurance 》
- Click to get rates
Part Number HGTG27N120BN |
Category Transistors - IGBTs - Single |
Manufacturer Fairchild Semiconductor |
Description INSULATED GATE BIPOLAR TRANSISTO |
Package Bulk |
Series - |
Operating Temperature -55°C ~ 150°C (TJ) |
Mounting Type Through Hole |
Package / Case TO-247-3 |
Supplier Device Package TO-247-3 |
Power - Max 500 W |
Input Type Standard |
Reverse Recovery Time (trr) - |
Current - Collector (Ic) (Max) 72 A |
Voltage - Collector Emitter Breakdown (Max) 1200 V |
IGBT Type NPT |
Vce(on) (Max) @ Vge, Ic 2.7V @ 15V, 27A |
Gate Charge 270 nC |
Td (on/off) @ 25°C 24ns/195ns |
Test Condition 960V, 27A, 3Ohm, 15V |
Current - Collector Pulsed (Icm) 216 A |
Switching Energy 2.2mJ (on), 2.3mJ (off) |
Package_case TO-247-3 |
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