HGTP10N120BN

ON Semiconductor HGTP10N120BN

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  • HGTP10N120BN
  • ON Semiconductor
  • IGBT 1200V 35A 298W TO220AB
  • Transistors - IGBTs - Single
  • HGTP10N120BN Datasheet
  • TO-220-3
  • Tube
  • Lead free / RoHS CompliantLead free / RoHS Compliant
  • 1377
  • Spot Inventory / Athorized Dstributor / Factory Excess Stock
  • 1 year quality assurance 》
  • Click to get rates
Part Number
HGTP10N120BN
Category
Transistors - IGBTs - Single
Manufacturer
ON Semiconductor
Description
IGBT 1200V 35A 298W TO220AB
Package
Tube
Series
-
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Through Hole
Package / Case
TO-220-3
Supplier Device Package
TO-220-3
Power - Max
298 W
Input Type
Standard
Reverse Recovery Time (trr)
-
Current - Collector (Ic) (Max)
35 A
Voltage - Collector Emitter Breakdown (Max)
1200 V
IGBT Type
NPT
Vce(on) (Max) @ Vge, Ic
2.7V @ 15V, 10A
Gate Charge
100 nC
Td (on/off) @ 25°C
23ns/165ns
Test Condition
960V, 10A, 10Ohm, 15V
Current - Collector Pulsed (Icm)
80 A
Switching Energy
320µJ (on), 800µJ (off)
Package_case
TO-220-3

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ON Semiconductor
ON Semiconductor
ON Semiconductor is driving energy efficient innovations, empowering customers to reduce global energy use. The company is a leading supplier of semiconductor-based solutions, offering a comprehensive portfolio of energy efficient power management, analog, ...
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