ON Semiconductor HGTP10N120BN
- HGTP10N120BN
- ON Semiconductor
- IGBT 1200V 35A 298W TO220AB
- Transistors - IGBTs - Single
- HGTP10N120BN Datasheet
- TO-220-3
- Tube
- Lead free / RoHS Compliant
- 1377
- Spot Inventory / Athorized Dstributor / Factory Excess Stock
- 1 year quality assurance 》
- Click to get rates
Part Number HGTP10N120BN |
Category Transistors - IGBTs - Single |
Manufacturer ON Semiconductor |
Description IGBT 1200V 35A 298W TO220AB |
Package Tube |
Series - |
Operating Temperature -55°C ~ 150°C (TJ) |
Mounting Type Through Hole |
Package / Case TO-220-3 |
Supplier Device Package TO-220-3 |
Power - Max 298 W |
Input Type Standard |
Reverse Recovery Time (trr) - |
Current - Collector (Ic) (Max) 35 A |
Voltage - Collector Emitter Breakdown (Max) 1200 V |
IGBT Type NPT |
Vce(on) (Max) @ Vge, Ic 2.7V @ 15V, 10A |
Gate Charge 100 nC |
Td (on/off) @ 25°C 23ns/165ns |
Test Condition 960V, 10A, 10Ohm, 15V |
Current - Collector Pulsed (Icm) 80 A |
Switching Energy 320µJ (on), 800µJ (off) |
Package_case TO-220-3 |
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