Toshiba Semiconductor and Storage HN1B04FE-GR,LF
- HN1B04FE-GR,LF
- Toshiba Semiconductor and Storage
- TRANS NPN/PNP 50V 0.15A ES6
- Transistors - Bipolar (BJT) - Arrays
- HN1B04FE-GR,LF Datasheet
- SOT-563, SOT-666
- Bulk
- Lead free / RoHS Compliant
- 23457
- Spot Inventory / Athorized Dstributor / Factory Excess Stock
- 1 year quality assurance 》
- Click to get rates
Part Number HN1B04FE-GR,LF |
Category Transistors - Bipolar (BJT) - Arrays |
Manufacturer Toshiba Semiconductor and Storage |
Description TRANS NPN/PNP 50V 0.15A ES6 |
Package Bulk |
Series - |
Operating Temperature 150°C (TJ) |
Mounting Type Surface Mount |
Package / Case SOT-563, SOT-666 |
Supplier Device Package ES6 |
Power - Max 100mW |
Transistor Type NPN, PNP |
Current - Collector (Ic) (Max) 150mA |
Voltage - Collector Emitter Breakdown (Max) 50V |
Vce Saturation (Max) @ Ib, Ic 250mV @ 10mA, 100mA |
Current - Collector Cutoff (Max) 100nA (ICBO) |
DC Current Gain (hFE) (Min) @ Ic, Vce 200 @ 2mA, 6V |
Frequency - Transition 80MHz |
Package_case SOT-563, SOT-666 |
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