HN1B04FE-GR,LF

Toshiba Semiconductor and Storage HN1B04FE-GR,LF

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  • HN1B04FE-GR,LF
  • Toshiba Semiconductor and Storage
  • TRANS NPN/PNP 50V 0.15A ES6
  • Transistors - Bipolar (BJT) - Arrays
  • HN1B04FE-GR,LF Datasheet
  • SOT-563, SOT-666
  • Bulk
  • Lead free / RoHS CompliantLead free / RoHS Compliant
  • 23457
  • Spot Inventory / Athorized Dstributor / Factory Excess Stock
  • 1 year quality assurance 》
  • Click to get rates
Part Number
HN1B04FE-GR,LF
Category
Transistors - Bipolar (BJT) - Arrays
Manufacturer
Toshiba Semiconductor and Storage
Description
TRANS NPN/PNP 50V 0.15A ES6
Package
Bulk
Series
-
Operating Temperature
150°C (TJ)
Mounting Type
Surface Mount
Package / Case
SOT-563, SOT-666
Supplier Device Package
ES6
Power - Max
100mW
Transistor Type
NPN, PNP
Current - Collector (Ic) (Max)
150mA
Voltage - Collector Emitter Breakdown (Max)
50V
Vce Saturation (Max) @ Ib, Ic
250mV @ 10mA, 100mA
Current - Collector Cutoff (Max)
100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce
200 @ 2mA, 6V
Frequency - Transition
80MHz
Package_case
SOT-563, SOT-666

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Toshiba Semiconductor and Storage
Toshiba Semiconductor and Storage
Toshiba Semiconductor and Storage - Toshiba Semiconductor & Storage offers a broad range of enabling technology solutions that allow OEMs, ODMs, CMs and fabless chip companies to develop advanced integrated products for the computing, ...
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