HUF75332P3

ON Semiconductor HUF75332P3

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  • HUF75332P3
  • ON Semiconductor
  • MOSFET N-CH 55V 60A TO220-3
  • Transistors - FETs, MOSFETs - Single
  • HUF75332P3 Datasheet
  • TO-220-3
  • Tube
  • Lead free / RoHS CompliantLead free / RoHS Compliant
  • 1206
  • Spot Inventory / Athorized Dstributor / Factory Excess Stock
  • 1 year quality assurance 》
  • Click to get rates
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What is HUF75332P3

ON Semiconductor Part Number HUF75332P3（Transistors - FETs, MOSFETs - Single）, developed and manufactured by ON Semiconductor, distributed globally by Jinftry. We distribute various electronic components from world-renowned brands and provide one-stop services, making us a trusted global electronic component distributor.

HUF75332P3 is one of the part numbers distributed by Jinftry, and you can learn about its specifications/configurations, package/case, Datasheet, and other information here. Electronic components are affected by supply and demand, and prices fluctuate frequently. If you have a demand, please do not hesitate to send us an RFQ or email us immediately [email protected] Please inquire about the real-time unit price, Data Code, Lead time, payment terms, and any other information you would like to know. We will do our best to provide you with a quotation and reply as soon as possible.

HUF75332P3 Specifications

  • Part NumberHUF75332P3
  • CategoryTransistors - FETs, MOSFETs - Single
  • ManufacturerON Semiconductor
  • DescriptionMOSFET N-CH 55V 60A TO220-3
  • PackageTube
  • SeriesUltraFET™
  • Operating Temperature-55°C ~ 175°C (TJ)
  • Mounting TypeThrough Hole
  • Package / CaseTO-220-3
  • Supplier Device PackageTO-220-3
  • TechnologyMOSFET (Metal Oxide)
  • Power Dissipation (Max)145W (Tc)
  • FET TypeN-Channel
  • FET Feature-
  • Drain to Source Voltage (Vdss)55 V
  • Current - Continuous Drain (Id) @ 25°C60A (Tc)
  • Rds On (Max) @ Id, Vgs19mOhm @ 60A, 10V
  • Vgs(th) (Max) @ Id4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs85 nC @ 20 V
  • Input Capacitance (Ciss) (Max) @ Vds1300 pF @ 25 V
  • Vgs (Max)±20V
  • Drive Voltage (Max Rds On, Min Rds On)10V

Application of HUF75332P3

FET and MOSFET-single (FETs, MOSFETs-Single) application field is extremely wide, almost covers the core part of all electronic devices. In the field of consumer electronics, from smartphones, tablets to wearable devices, FETs and MOSFETs are key components for signal processing and power management, ensuring the normal operation of devices and efficient energy consumption. In industrial control systems, they are widely used in the fields of motor drive, automated production lines and process control, improving production efficiency and system stability. In addition, in automotive electronics, medical equipment, aerospace and other high-tech fields, FET and MOSFET also play an irreplaceable role. In automotive electronics, for example, they are used in engine management systems, safety systems, and entertainment systems. In medical equipment, it is used for key links such as signal amplification and power control of precision instruments.

HUF75332P3 Datasheet

HUF75332P3 Datasheet , Tube,UltraFET™,-55°C ~ 175°C (TJ),Through Hole,TO-220-3,TO-220-3,MOSFET (Metal Oxide),145W (Tc),N-Channel,55 V,60A (Tc),19mOhm @ 60A, 10V,4V @ 250µA,85 nC @ 20 V,1300 pF @ 25 V,±20V,10V

HUF75332P3 Classification

Transistors - FETs, MOSFETs - Single

FET (field effect transistor) is an electronic device that controls the flow of current in a semiconductor based on the electric field effect. It is mainly composed of three ends: Gate, Source and Drain, and the current between source and drain is modulated by changing the grid voltage.MOSFET (metal oxide semiconductor field effect transistor) is a special type of FET, which plays an important role in electronic design because of its high input impedance, low noise and low power consumption. Mosfet-single also refers to a single MOSFET element or a simple circuit unit with it as the core, which further improves performance stability and application range on the basis of retaining the basic characteristics of FET.

FAQ about Transistors - FETs, MOSFETs - Single

  • 1. How does a MOSFET work?

    When a sufficient forward voltage is applied to the gate relative to the source, a conductive channel is formed on the silicon surface under the insulating layer, allowing current to flow from the source to the drain. For an N-channel enhancement MOSFET, the channel begins to conduct when Vgs (gate-source voltage) exceeds the threshold voltage Vth; for a P-channel MOSFET, the opposite is true.

  • 2. How to connect a MOSFET?


    The source is usually connected to a lower potential (such as ground).
    The drain is connected to the load or power supply.
    The gate is connected to the control signal through an appropriate drive circuit.
    Sometimes a small resistor is added between the gate and the source to prevent oscillation.

  • 3. What are the advantages of MOSFETs?

    High input impedance.
    Low noise.
    Low power consumption.
    Fast switching characteristics.
    Easy to integrate.
    High reliability and durability.

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Do you have any questions about HUF75332P3 ?
Feel free to contact us:

+86-755-28503874
+8615019224070, annies65, +8615118125813
568248857, 827259012, 316249462
+8615019224070, +8615118118839, +8615118125813
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ON Semiconductor
ON Semiconductor
Established in 1999, ON Semiconductor is a globally renowned leading semiconductor product supplier headquartered in Phoenix, Arizona, USA, with over 30000 employees. At first, ON Semiconductor was a branch of Phoenix Worldwide Semiconductor and later...
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