IGLD60R070D1AUMA1

Infineon Technologies IGLD60R070D1AUMA1

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  • IGLD60R070D1AUMA1
  • Infineon Technologies
  • GANFET N-CH 600V 15A LSON-8
  • Transistors - FETs, MOSFETs - Single
  • IGLD60R070D1AUMA1 Datasheet
  • 8-LDFN Exposed Pad
  • Tape & Reel (TR)
  • Lead free / RoHS CompliantLead free / RoHS Compliant
  • 2766
  • Spot Inventory / Athorized Dstributor / Factory Excess Stock
  • 1 year quality assurance 》
  • Click to get rates
Part Number
IGLD60R070D1AUMA1
Category
Transistors - FETs, MOSFETs - Single
Manufacturer
Infineon Technologies
Description
GANFET N-CH 600V 15A LSON-8
Package
Tape & Reel (TR)
Series
CoolGaN™
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Surface Mount
Package / Case
8-LDFN Exposed Pad
Supplier Device Package
PG-LSON-8-1
Technology
GaNFET (Gallium Nitride)
Power Dissipation (Max)
114W (Tc)
FET Type
N-Channel
FET Feature
-
Drain to Source Voltage (Vdss)
600 V
Current - Continuous Drain (Id) @ 25°C
15A (Tc)
Rds On (Max) @ Id, Vgs
-
Vgs(th) (Max) @ Id
1.6V @ 2.6mA
Gate Charge (Qg) (Max) @ Vgs
-
Input Capacitance (Ciss) (Max) @ Vds
380 pF @ 400 V
Vgs (Max)
-10V
Drive Voltage (Max Rds On, Min Rds On)
-
Package_case
8-LDFN Exposed Pad

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Infineon Technologies
Infineon Technologies
Infineon Technologies is a leading global designer, manufacturer and supplier of a broad range of semiconductors used in various microelectronic applications. Infineon's product portfolio consists of logic products, including digital, mixed-signal, and analog ...
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