IMBG120R350M1HXTMA1

Infineon Technologies IMBG120R350M1HXTMA1

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  • IMBG120R350M1HXTMA1
  • Infineon Technologies
  • TRANS SJT N-CH 1.2KV 4.7A TO263
  • Transistors - FETs, MOSFETs - Single
  • IMBG120R350M1HXTMA1 Datasheet
  • TO-263-8, D²Pak (7 Leads + Tab), TO-263CA
  • Tube
  • Lead free / RoHS CompliantLead free / RoHS Compliant
  • 2135
  • Spot Inventory / Athorized Dstributor / Factory Excess Stock
  • 1 year quality assurance 》
  • Click to get rates
Part Number
IMBG120R350M1HXTMA1
Category
Transistors - FETs, MOSFETs - Single
Manufacturer
Infineon Technologies
Description
TRANS SJT N-CH 1.2KV 4.7A TO263
Package
Tube
Series
CoolSiC™
Operating Temperature
-55°C ~ 175°C (TJ)
Mounting Type
Surface Mount
Package / Case
TO-263-8, D²Pak (7 Leads + Tab), TO-263CA
Supplier Device Package
PG-TO263-7-12
Technology
SiC (Silicon Carbide Junction Transistor)
Power Dissipation (Max)
65W (Tc)
FET Type
N-Channel
FET Feature
Standard
Drain to Source Voltage (Vdss)
1200 V
Current - Continuous Drain (Id) @ 25°C
4.7A (Tc)
Rds On (Max) @ Id, Vgs
468mOhm @ 2A, 18V
Vgs(th) (Max) @ Id
5.7V @ 1mA
Gate Charge (Qg) (Max) @ Vgs
5.9 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds
196 pF @ 800 V
Vgs (Max)
+18V, -15V
Drive Voltage (Max Rds On, Min Rds On)
-
Package_case
TO-263-8, D²Pak (7 Leads + Tab), TO-263CA

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Infineon Technologies
Infineon Technologies
Infineon Technologies is a leading global designer, manufacturer and supplier of a broad range of semiconductors used in various microelectronic applications. Infineon's product portfolio consists of logic products, including digital, mixed-signal, and analog ...
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