IMW120R090M1HXKSA1

Infineon Technologies IMW120R090M1HXKSA1

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  • IMW120R090M1HXKSA1
  • Infineon Technologies
  • SICFET N-CH 1.2KV 26A TO247-3
  • Transistors - FETs, MOSFETs - Single
  • IMW120R090M1HXKSA1 Datasheet
  • TO-247-3
  • Tube
  • Lead free / RoHS CompliantLead free / RoHS Compliant
  • 4572
  • Spot Inventory / Athorized Dstributor / Factory Excess Stock
  • 1 year quality assurance 》
  • Click to get rates
Part Number
IMW120R090M1HXKSA1
Category
Transistors - FETs, MOSFETs - Single
Manufacturer
Infineon Technologies
Description
SICFET N-CH 1.2KV 26A TO247-3
Package
Tube
Series
CoolSiC™
Operating Temperature
-55°C ~ 175°C (TJ)
Mounting Type
Through Hole
Package / Case
TO-247-3
Supplier Device Package
PG-TO247-3-41
Technology
SiCFET (Silicon Carbide)
Power Dissipation (Max)
115W (Tc)
FET Type
N-Channel
FET Feature
-
Drain to Source Voltage (Vdss)
1200 V
Current - Continuous Drain (Id) @ 25°C
26A (Tc)
Rds On (Max) @ Id, Vgs
117mOhm @ 8.5A, 18V
Vgs(th) (Max) @ Id
5.7V @ 3.7mA
Gate Charge (Qg) (Max) @ Vgs
21 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds
707 pF @ 800 V
Vgs (Max)
+23V, -7V
Drive Voltage (Max Rds On, Min Rds On)
15V, 18V
Package_case
TO-247-3

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Infineon Technologies
Infineon Technologies
Infineon Technologies is a leading global designer, manufacturer and supplier of a broad range of semiconductors used in various microelectronic applications. Infineon's product portfolio consists of logic products, including digital, mixed-signal, and analog ...
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