Infineon Technologies IMW120R350M1HXKSA1
- IMW120R350M1HXKSA1
- Infineon Technologies
- SICFET N-CH 1.2KV 4.7A TO247-3
- Transistors - FETs, MOSFETs - Single
- IMW120R350M1HXKSA1 Datasheet
- TO-247-3
- Tube
- Lead free / RoHS Compliant
- 1175
- Spot Inventory / Athorized Dstributor / Factory Excess Stock
- 1 year quality assurance 》
- Click to get rates
Part Number IMW120R350M1HXKSA1 |
Category Transistors - FETs, MOSFETs - Single |
Manufacturer Infineon Technologies |
Description SICFET N-CH 1.2KV 4.7A TO247-3 |
Package Tube |
Series CoolSiC™ |
Operating Temperature -55°C ~ 175°C (TJ) |
Mounting Type Through Hole |
Package / Case TO-247-3 |
Supplier Device Package PG-TO247-3-41 |
Technology SiCFET (Silicon Carbide) |
Power Dissipation (Max) 60W (Tc) |
FET Type N-Channel |
FET Feature - |
Drain to Source Voltage (Vdss) 1200 V |
Current - Continuous Drain (Id) @ 25°C 4.7A (Tc) |
Rds On (Max) @ Id, Vgs 455mOhm @ 2A, 18V |
Vgs(th) (Max) @ Id 5.7V @ 1mA |
Gate Charge (Qg) (Max) @ Vgs 5.3 nC @ 18 V |
Input Capacitance (Ciss) (Max) @ Vds 182 pF @ 800 V |
Vgs (Max) +23V, -7V |
Drive Voltage (Max Rds On, Min Rds On) 15V, 18V |
Package_case TO-247-3 |
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Infineon Technologies
Infineon Technologies is a leading global designer, manufacturer and supplier of a broad range of semiconductors used in various microelectronic applications. Infineon's product portfolio consists of logic products, including digital, mixed-signal, and analog ...
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