IMW65R030M1HXKSA1

Infineon Technologies IMW65R030M1HXKSA1

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  • IMW65R030M1HXKSA1
  • Infineon Technologies
  • SILICON CARBIDE MOSFET, PG-TO247
  • Transistors - FETs, MOSFETs - Single
  • IMW65R030M1HXKSA1 Datasheet
  • TO-247-3
  • Tape & Reel (TR)
  • Lead free / RoHS CompliantLead free / RoHS Compliant
  • 1509
  • Spot Inventory / Athorized Dstributor / Factory Excess Stock
  • 1 year quality assurance 》
  • Click to get rates
Part Number
IMW65R030M1HXKSA1
Category
Transistors - FETs, MOSFETs - Single
Manufacturer
Infineon Technologies
Description
SILICON CARBIDE MOSFET, PG-TO247
Package
Tape & Reel (TR)
Series
CoolSiC™
Operating Temperature
-55°C ~ 175°C (TJ)
Mounting Type
Through Hole
Package / Case
TO-247-3
Supplier Device Package
PG-TO247-3-41
Technology
SiC (Silicon Carbide Junction Transistor)
Power Dissipation (Max)
197W (Tc)
FET Type
N-Channel
FET Feature
-
Drain to Source Voltage (Vdss)
650 V
Current - Continuous Drain (Id) @ 25°C
58A (Tc)
Rds On (Max) @ Id, Vgs
42mOhm @ 29.5A, 18V
Vgs(th) (Max) @ Id
5.7V @ 8.8mA
Gate Charge (Qg) (Max) @ Vgs
48 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds
1643 pF @ 400 V
Vgs (Max)
+20V, -2V
Drive Voltage (Max Rds On, Min Rds On)
18V
Package_case
TO-247-3

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Infineon Technologies
Infineon Technologies
Infineon Technologies is a leading global designer, manufacturer and supplier of a broad range of semiconductors used in various microelectronic applications. Infineon's product portfolio consists of logic products, including digital, mixed-signal, and analog ...
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