IPD11DP10NMATMA1

Infineon Technologies IPD11DP10NMATMA1

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  • IPD11DP10NMATMA1
  • Infineon Technologies
  • TRENCH >=100V PG-TO252-3
  • Transistors - FETs, MOSFETs - Single
  • IPD11DP10NMATMA1 Datasheet
  • TO-252-3, DPak (2 Leads + Tab), SC-63
  • Tube
  • Lead free / RoHS CompliantLead free / RoHS Compliant
  • 3886
  • Spot Inventory / Athorized Dstributor / Factory Excess Stock
  • 1 year quality assurance 》
  • Click to get rates
Part Number
IPD11DP10NMATMA1
Category
Transistors - FETs, MOSFETs - Single
Manufacturer
Infineon Technologies
Description
TRENCH >=100V PG-TO252-3
Package
Tube
Series
OptiMOS™
Operating Temperature
-55°C ~ 175°C (TJ)
Mounting Type
Surface Mount
Package / Case
TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package
PG-TO252-3
Technology
MOSFET (Metal Oxide)
Power Dissipation (Max)
3W (Ta), 125W (Tc)
FET Type
P-Channel
FET Feature
-
Drain to Source Voltage (Vdss)
100 V
Current - Continuous Drain (Id) @ 25°C
3.4A (Ta), 22A (Tc)
Rds On (Max) @ Id, Vgs
111mOhm @ 18A, 10V
Vgs(th) (Max) @ Id
4V @ 1.7mA
Gate Charge (Qg) (Max) @ Vgs
74 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds
3200 pF @ 50 V
Vgs (Max)
±20V
Drive Voltage (Max Rds On, Min Rds On)
10V
Package_case
TO-252-3, DPak (2 Leads + Tab), SC-63

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Infineon Technologies
Infineon Technologies
Infineon Technologies is a leading global designer, manufacturer and supplier of a broad range of semiconductors used in various microelectronic applications. Infineon's product portfolio consists of logic products, including digital, mixed-signal, and analog ...
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