IRF630

Harris Corporation IRF630

The picture is for reference only, please refer to the product specification

  • IRF630
  • Harris Corporation
  • MOSFET N-CH 200V 9A TO220AB
  • Transistors - FETs, MOSFETs - Single
  • IRF630 Datasheet
  • TO-220-3
  • Tube
  • Lead free / RoHS CompliantLead free / RoHS Compliant
  • 4633
  • Spot Inventory / Athorized Dstributor / Factory Excess Stock
  • 1 year quality assurance 》
  • Click to get rates
Part Number
IRF630
Category
Transistors - FETs, MOSFETs - Single
Manufacturer
Harris Corporation
Description
MOSFET N-CH 200V 9A TO220AB
Package
Tube
Series
-
Operating Temperature
-
Mounting Type
Through Hole
Package / Case
TO-220-3
Supplier Device Package
TO-220AB
Technology
MOSFET (Metal Oxide)
Power Dissipation (Max)
-
FET Type
N-Channel
FET Feature
-
Drain to Source Voltage (Vdss)
200 V
Current - Continuous Drain (Id) @ 25°C
9A (Tc)
Rds On (Max) @ Id, Vgs
400mOhm @ 5.4A, 10V
Vgs(th) (Max) @ Id
4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
43 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds
800 pF @ 25 V
Vgs (Max)
-
Drive Voltage (Max Rds On, Min Rds On)
-
Package_case
TO-220-3

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• Competitive Market Price

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+8615019224070, annies65, +8615118125813
568248857, 827259012, 316249462
+8615019224070, +8615118118839, +8615118125813
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