Infineon Technologies IRFB31N20DPBF
- IRFB31N20DPBF
- Infineon Technologies
- MOSFET N-CH 200V 31A TO220AB
- Transistors - FETs, MOSFETs - Single
- IRFB31N20DPBF Datasheet
- TO-220-3
- Bulk
- Lead free / RoHS Compliant
- 736
- Spot Inventory / Athorized Dstributor / Factory Excess Stock
- 1 year quality assurance 》
- Click to get rates
Part Number IRFB31N20DPBF |
Category Transistors - FETs, MOSFETs - Single |
Manufacturer Infineon Technologies |
Description MOSFET N-CH 200V 31A TO220AB |
Package Bulk |
Series HEXFET® |
Operating Temperature -55°C ~ 175°C (TJ) |
Mounting Type Through Hole |
Package / Case TO-220-3 |
Supplier Device Package TO-220AB |
Technology MOSFET (Metal Oxide) |
Power Dissipation (Max) 3.1W (Ta), 200W (Tc) |
FET Type N-Channel |
FET Feature - |
Drain to Source Voltage (Vdss) 200 V |
Current - Continuous Drain (Id) @ 25°C 31A (Tc) |
Rds On (Max) @ Id, Vgs 82mOhm @ 18A, 10V |
Vgs(th) (Max) @ Id 5.5V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs 107 nC @ 10 V |
Input Capacitance (Ciss) (Max) @ Vds 2370 pF @ 25 V |
Vgs (Max) ±30V |
Drive Voltage (Max Rds On, Min Rds On) 10V |
Package_case TO-220-3 |
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Infineon Technologies
Infineon Technologies is a leading global designer, manufacturer and supplier of a broad range of semiconductors used in various microelectronic applications. Infineon's product portfolio consists of logic products, including digital, mixed-signal, and analog ...
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