Fairchild Semiconductor IRFS610BFP001
- IRFS610BFP001
- Fairchild Semiconductor
- POWER FIELD-EFFECT TRANSISTOR, N
- Transistors - FETs, MOSFETs - Single
- IRFS610BFP001 Datasheet
- TO-220-3 Full Pack
- Cut Tape (CT)
- Lead free / RoHS Compliant
- 11911
- Spot Inventory / Athorized Dstributor / Factory Excess Stock
- 1 year quality assurance 》
- Click to get rates
Part Number IRFS610BFP001 |
Category Transistors - FETs, MOSFETs - Single |
Manufacturer Fairchild Semiconductor |
Description POWER FIELD-EFFECT TRANSISTOR, N |
Package Cut Tape (CT) |
Series - |
Operating Temperature -55°C ~ 150°C (TJ) |
Mounting Type Through Hole |
Package / Case TO-220-3 Full Pack |
Supplier Device Package TO-220F |
Technology MOSFET (Metal Oxide) |
Power Dissipation (Max) 22W (Tc) |
FET Type N-Channel |
FET Feature - |
Drain to Source Voltage (Vdss) 200 V |
Current - Continuous Drain (Id) @ 25°C 3.3A (Tj) |
Rds On (Max) @ Id, Vgs 1.5Ohm @ 1.65A, 10V |
Vgs(th) (Max) @ Id 4V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs 9.3 nC @ 10 V |
Input Capacitance (Ciss) (Max) @ Vds 225 pF @ 25 V |
Vgs (Max) ±30V |
Drive Voltage (Max Rds On, Min Rds On) 10V |
Package_case TO-220-3 Full Pack |
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Fairchild Semiconductor
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