Infineon Technologies IRG8CH106K10F
- IRG8CH106K10F
- Infineon Technologies
- IGBT 1200V 110A DIE
- Transistors - IGBTs - Single
- IRG8CH106K10F Datasheet
- Die
- Bulk
- Lead free / RoHS Compliant
- 1024
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- 1 year quality assurance 》
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Part Number IRG8CH106K10F |
Category Transistors - IGBTs - Single |
Manufacturer Infineon Technologies |
Description IGBT 1200V 110A DIE |
Package Bulk |
Series - |
Operating Temperature -40°C ~ 175°C (TJ) |
Mounting Type Surface Mount |
Package / Case Die |
Supplier Device Package Die |
Power - Max - |
Input Type Standard |
Reverse Recovery Time (trr) - |
Current - Collector (Ic) (Max) - |
Voltage - Collector Emitter Breakdown (Max) 1200 V |
IGBT Type - |
Vce(on) (Max) @ Vge, Ic 2V @ 15V, 110A |
Gate Charge 700 nC |
Td (on/off) @ 25°C 80ns/380ns |
Test Condition 600V, 110A, 1Ohm, 15V |
Current - Collector Pulsed (Icm) - |
Switching Energy - |
Package_case Die |
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Infineon Technologies
Infineon Technologies is a leading global designer, manufacturer and supplier of a broad range of semiconductors used in various microelectronic applications. Infineon's product portfolio consists of logic products, including digital, mixed-signal, and analog ...
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