IXYS Integrated Circuits Division IX2113BTR
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- IX2113BTR
- IXYS Integrated Circuits Division
- IC GATE DRVR HALF-BRIDGE 16SOIC
- PMIC - Gate Drivers
- IX2113BTR Datasheet
- 16-SOIC (0.295\", 7.50mm Width)
- Tape & Reel (TR)
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Lead free / RoHS Compliant - 4312
- Spot Inventory / Athorized Dstributor / Factory Excess Stock
- 1 year quality assurance 》
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What is IX2113BTR
IXYS Integrated Circuits Division Part Number IX2113BTR（PMIC - Gate Drivers）, developed and manufactured by IXYS Integrated Circuits Division, distributed globally by Jinftry. We distribute various electronic components from world-renowned brands and provide one-stop services, making us a trusted global electronic component distributor.
IX2113BTR is one of the part numbers distributed by Jinftry, and you can learn about its specifications/configurations, package/case, Datasheet, and other information here. Electronic components are affected by supply and demand, and prices fluctuate frequently. If you have a demand, please do not hesitate to send us an RFQ or email us immediately [email protected] Please inquire about the real-time unit price, Data Code, Lead time, payment terms, and any other information you would like to know. We will do our best to provide you with a quotation and reply as soon as possible.
IX2113BTR Specifications
- Part NumberIX2113BTR
- CategoryPMIC - Gate Drivers
- ManufacturerIXYS Integrated Circuits Division
- DescriptionIC GATE DRVR HALF-BRIDGE 16SOIC
- PackageTape & Reel (TR)
- Series-
- Voltage - Supply10V ~ 20V
- Operating Temperature-40°C ~ 150°C (TJ)
- Mounting TypeSurface Mount
- Package / Case16-SOIC (0.295\", 7.50mm Width)
- Supplier Device Package16-SOIC
- Input TypeNon-Inverting
- Channel TypeIndependent
- Rise / Fall Time (Typ)9.4ns, 9.7ns
- Driven ConfigurationHalf-Bridge
- Number of Drivers2
- Gate TypeIGBT, N-Channel, P-Channel MOSFET
- Logic Voltage - VIL, VIH6V, 9.5V
- Current - Peak Output (Source, Sink)2A, 2A
- High Side Voltage - Max (Bootstrap)600 V
Application of IX2113BTR
IX2113BTR Datasheet
IX2113BTR Datasheet , Tape & Reel (TR),10V ~ 20V,-40°C ~ 150°C (TJ),Surface Mount,16-SOIC (0.295\", 7.50mm Width),16-SOIC,Non-Inverting,Independent,9.4ns, 9.7ns,Half-Bridge,2,IGBT, N-Channel, P-Channel MOSFET,6V, 9.5V,2A, 2A,600
IX2113BTR Classification
PMIC - Gate Drivers
FAQ about PMIC - Gate Drivers
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1. What is an active gate driver?
An active gate driver is a circuit that is mainly used to enhance the gate signal of a field effect transistor (MOSFET) or an insulated gate bipolar transistor (IGBT) so that the controller can better control the operation of these semiconductor switches. It controls the gate of MOSFET or IGBT by converting the signal output by the controller into high-voltage, high-current pulses, thereby improving the performance, reliability and service life of these devices.
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2. What is a motor gate driver?
A motor gate driver is a circuit that is mainly used to enhance the gate signal of a field effect transistor (MOSFET) or an insulated gate bipolar transistor (IGBT) so that the controller can better control the operation of these semiconductor switches. It converts the low-voltage signal output by the controller into a high-voltage, high-current pulse signal to ensure that the MOSFET or IGBT can switch states stably and quickly within its operating range.
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3. What is the difference between MOSFET and IGBT gate drivers?
The gate drivers of MOSFET and IGBT have significant differences in drive voltage, drive current, and drive mode.
Drive Voltage and Drive Current
MOSFET: The gate drive voltage of MOSFET is low, usually between 10V and 20V. Due to its structural characteristics, the driving current of MOSFET is also relatively small, which is suitable for using a smaller driving circuit.
IGBT: The gate driving voltage of IGBT is relatively high, usually between 15V and 20V. Due to its composite structure, IGBT requires a large driving current to control its conduction and cutoff, and usually requires a special driving circuit to provide sufficient driving power.
Driving method
MOSFET: The switching speed of MOSFET is very fast and suitable for high-frequency applications. Its driving method is relatively simple, and the gate can be directly controlled by voltage to achieve fast switching action.
IGBT: The switching speed of IGBT is slow and suitable for low-frequency applications. Due to its composite structure, IGBT requires a larger driving current and a more complex driving circuit to ensure its stable operation. IGBT usually requires positive and negative voltages to control its conduction and cutoff, especially when it is turned off, a negative voltage is required to eliminate the current tailing effect.
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