IXFH12N100P

IXYS IXFH12N100P

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  • IXFH12N100P
  • IXYS
  • MOSFET N-CH 1000V 12A TO247AD
  • Transistors - FETs, MOSFETs - Single
  • IXFH12N100P Datasheet
  • TO-247-3
  • Tube
  • Lead free / RoHS CompliantLead free / RoHS Compliant
  • 3101
  • Spot Inventory / Athorized Dstributor / Factory Excess Stock
  • 1 year quality assurance 》
  • Click to get rates
Part Number
IXFH12N100P
Category
Transistors - FETs, MOSFETs - Single
Manufacturer
IXYS
Description
MOSFET N-CH 1000V 12A TO247AD
Package
Tube
Series
HiPerFET™, PolarP2™
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Through Hole
Package / Case
TO-247-3
Supplier Device Package
TO-247AD (IXFH)
Technology
MOSFET (Metal Oxide)
Power Dissipation (Max)
463W (Tc)
FET Type
N-Channel
FET Feature
-
Drain to Source Voltage (Vdss)
1000 V
Current - Continuous Drain (Id) @ 25°C
12A (Tc)
Rds On (Max) @ Id, Vgs
1.05Ohm @ 6A, 10V
Vgs(th) (Max) @ Id
5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs
80 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds
4080 pF @ 25 V
Vgs (Max)
±30V
Drive Voltage (Max Rds On, Min Rds On)
10V
Package_case
TO-247-3

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+86-755-82518276
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IXYS
IXYS
IXYS Corporation is a global supplier of power management semiconductors with a comprehensive range of Power MOSFET, IGBT, bipolar, and mixed-signal IC solutions that provide improved efficiency and reduced energy costs in a ...
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