IXFH80N65X2-4

IXYS IXFH80N65X2-4

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  • IXFH80N65X2-4
  • IXYS
  • MOSFET N-CH 650V 80A TO247-4L
  • Transistors - FETs, MOSFETs - Single
  • IXFH80N65X2-4 Datasheet
  • TO-247-4
  • Tube
  • Lead free / RoHS CompliantLead free / RoHS Compliant
  • 9728
  • Spot Inventory / Athorized Dstributor / Factory Excess Stock
  • 1 year quality assurance 》
  • Click to get rates
Part Number
IXFH80N65X2-4
Category
Transistors - FETs, MOSFETs - Single
Manufacturer
IXYS
Description
MOSFET N-CH 650V 80A TO247-4L
Package
Tube
Series
HiPerFET™
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Through Hole
Package / Case
TO-247-4
Supplier Device Package
TO-247-4L
Technology
MOSFET (Metal Oxide)
Power Dissipation (Max)
890W (Tc)
FET Type
N-Channel
FET Feature
-
Drain to Source Voltage (Vdss)
650 V
Current - Continuous Drain (Id) @ 25°C
80A (Tc)
Rds On (Max) @ Id, Vgs
38mOhm @ 500mA, 10V
Vgs(th) (Max) @ Id
5V @ 4mA
Gate Charge (Qg) (Max) @ Vgs
140 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds
8300 pF @ 25 V
Vgs (Max)
±30V
Drive Voltage (Max Rds On, Min Rds On)
10V
Package_case
TO-247-4

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IXYS
IXYS Corporation is a global supplier of power management semiconductors with a comprehensive range of Power MOSFET, IGBT, bipolar, and mixed-signal IC solutions that provide improved efficiency and reduced energy costs in a ...
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