IXYS IXFN120N65X2
- IXFN120N65X2
- IXYS
- MOSFET N-CH 650V 108A SOT227B
- Transistors - FETs, MOSFETs - Single
- IXFN120N65X2 Datasheet
- SOT-227-4, miniBLOC
- Tube
- Lead free / RoHS Compliant
- 2229
- Spot Inventory / Athorized Dstributor / Factory Excess Stock
- 1 year quality assurance 》
- Click to get rates
Part Number IXFN120N65X2 |
Category Transistors - FETs, MOSFETs - Single |
Manufacturer IXYS |
Description MOSFET N-CH 650V 108A SOT227B |
Package Tube |
Series HiPerFET™ |
Operating Temperature -55°C ~ 150°C (TJ) |
Mounting Type Chassis Mount |
Package / Case SOT-227-4, miniBLOC |
Supplier Device Package SOT-227B |
Technology MOSFET (Metal Oxide) |
Power Dissipation (Max) 890W (Tc) |
FET Type N-Channel |
FET Feature - |
Drain to Source Voltage (Vdss) 650 V |
Current - Continuous Drain (Id) @ 25°C 108A (Tc) |
Rds On (Max) @ Id, Vgs 24mOhm @ 54A, 10V |
Vgs(th) (Max) @ Id 5.5V @ 8mA |
Gate Charge (Qg) (Max) @ Vgs 225 nC @ 10 V |
Input Capacitance (Ciss) (Max) @ Vds 15500 pF @ 25 V |
Vgs (Max) ±30V |
Drive Voltage (Max Rds On, Min Rds On) 10V |
Package_case SOT-227-4, miniBLOC |
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Customer reviews
IXYS
IXYS Corporation is a global supplier of power management semiconductors with a comprehensive range of Power MOSFET, IGBT, bipolar, and mixed-signal IC solutions that provide improved efficiency and reduced energy costs in a ...
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