IXFN80N60P3

IXYS IXFN80N60P3

The picture is for reference only, please refer to the product specification

  • IXFN80N60P3
  • IXYS
  • MOSFET N-CH 600V 66A SOT-227B
  • Transistors - FETs, MOSFETs - Single
  • IXFN80N60P3 Datasheet
  • SOT-227-4, miniBLOC
  • Tube
  • Lead free / RoHS CompliantLead free / RoHS Compliant
  • 1665
  • Spot Inventory / Athorized Dstributor / Factory Excess Stock
  • 1 year quality assurance 》
  • Click to get rates
Part Number
IXFN80N60P3
Category
Transistors - FETs, MOSFETs - Single
Manufacturer
IXYS
Description
MOSFET N-CH 600V 66A SOT-227B
Package
Tube
Series
HiPerFET™, Polar3™
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Chassis Mount
Package / Case
SOT-227-4, miniBLOC
Supplier Device Package
SOT-227B
Technology
MOSFET (Metal Oxide)
Power Dissipation (Max)
960W (Tc)
FET Type
N-Channel
FET Feature
-
Drain to Source Voltage (Vdss)
600 V
Current - Continuous Drain (Id) @ 25°C
66A (Tc)
Rds On (Max) @ Id, Vgs
70mOhm @ 40A, 10V
Vgs(th) (Max) @ Id
5V @ 8mA
Gate Charge (Qg) (Max) @ Vgs
190 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds
13100 pF @ 25 V
Vgs (Max)
±30V
Drive Voltage (Max Rds On, Min Rds On)
10V
Package_case
SOT-227-4, miniBLOC

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IXYS
IXYS
IXYS Corporation is a global supplier of power management semiconductors with a comprehensive range of Power MOSFET, IGBT, bipolar, and mixed-signal IC solutions that provide improved efficiency and reduced energy costs in a ...
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