IXFT13N100

IXYS IXFT13N100

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  • IXFT13N100
  • IXYS
  • MOSFET N-CH 1000V 12.5A TO268
  • Transistors - FETs, MOSFETs - Single
  • IXFT13N100 Datasheet
  • TO-268-3, D³Pak (2 Leads + Tab), TO-268AA
  • Cut Tape (CT)
  • Lead free / RoHS CompliantLead free / RoHS Compliant
  • 1073
  • Spot Inventory / Athorized Dstributor / Factory Excess Stock
  • 1 year quality assurance 》
  • Click to get rates
Part Number
IXFT13N100
Category
Transistors - FETs, MOSFETs - Single
Manufacturer
IXYS
Description
MOSFET N-CH 1000V 12.5A TO268
Package
Cut Tape (CT)
Series
HiPerFET™
Operating Temperature
-
Mounting Type
Surface Mount
Package / Case
TO-268-3, D³Pak (2 Leads + Tab), TO-268AA
Supplier Device Package
TO-268AA
Technology
MOSFET (Metal Oxide)
Power Dissipation (Max)
300W (Tc)
FET Type
N-Channel
FET Feature
-
Drain to Source Voltage (Vdss)
1000 V
Current - Continuous Drain (Id) @ 25°C
12.5A (Tc)
Rds On (Max) @ Id, Vgs
900mOhm @ 500mA, 10V
Vgs(th) (Max) @ Id
4.5V @ 4mA
Gate Charge (Qg) (Max) @ Vgs
155 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds
4000 pF @ 25 V
Vgs (Max)
±20V
Drive Voltage (Max Rds On, Min Rds On)
10V
Package_case
TO-268-3, D³Pak (2 Leads + Tab), TO-268AA

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+86-755-82518276
+8615019224070, annies65, +8615118125813
568248857, 827259012, 316249462
+8615019224070, +8615118118839, +8615118125813
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IXYS
IXYS Corporation is a global supplier of power management semiconductors with a comprehensive range of Power MOSFET, IGBT, bipolar, and mixed-signal IC solutions that provide improved efficiency and reduced energy costs in a ...
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