IXFT30N85XHV

IXYS IXFT30N85XHV

The picture is for reference only, please refer to the product specification

  • IXFT30N85XHV
  • IXYS
  • MOSFET N-CH 850V 30A TO268
  • Transistors - FETs, MOSFETs - Single
  • IXFT30N85XHV Datasheet
  • TO-268-3, D³Pak (2 Leads + Tab), TO-268AA
  • Tube
  • Lead free / RoHS CompliantLead free / RoHS Compliant
  • 1864
  • Spot Inventory / Athorized Dstributor / Factory Excess Stock
  • 1 year quality assurance 》
  • Click to get rates
Part Number
IXFT30N85XHV
Category
Transistors - FETs, MOSFETs - Single
Manufacturer
IXYS
Description
MOSFET N-CH 850V 30A TO268
Package
Tube
Series
HiPerFET™
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Surface Mount
Package / Case
TO-268-3, D³Pak (2 Leads + Tab), TO-268AA
Supplier Device Package
TO-268 (IXFT)
Technology
MOSFET (Metal Oxide)
Power Dissipation (Max)
695W (Tc)
FET Type
N-Channel
FET Feature
-
Drain to Source Voltage (Vdss)
850 V
Current - Continuous Drain (Id) @ 25°C
30A (Tc)
Rds On (Max) @ Id, Vgs
220mOhm @ 500mA, 10V
Vgs(th) (Max) @ Id
5.5V @ 2.5mA
Gate Charge (Qg) (Max) @ Vgs
68 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds
2460 pF @ 25 V
Vgs (Max)
±30V
Drive Voltage (Max Rds On, Min Rds On)
10V
Package_case
TO-268-3, D³Pak (2 Leads + Tab), TO-268AA

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+86-755-82518276
+8615019224070, annies65, +8615118125813
568248857, 827259012, 316249462
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IXYS
IXYS
IXYS Corporation is a global supplier of power management semiconductors with a comprehensive range of Power MOSFET, IGBT, bipolar, and mixed-signal IC solutions that provide improved efficiency and reduced energy costs in a ...
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