IXTA120P065T

IXYS IXTA120P065T

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  • IXTA120P065T
  • IXYS
  • MOSFET P-CH 65V 120A TO263
  • Transistors - FETs, MOSFETs - Single
  • IXTA120P065T Datasheet
  • TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
  • Tube
  • Lead free / RoHS CompliantLead free / RoHS Compliant
  • 3458
  • Spot Inventory / Athorized Dstributor / Factory Excess Stock
  • 1 year quality assurance 》
  • Click to get rates
Part Number
IXTA120P065T
Category
Transistors - FETs, MOSFETs - Single
Manufacturer
IXYS
Description
MOSFET P-CH 65V 120A TO263
Package
Tube
Series
TrenchP™
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Surface Mount
Package / Case
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Supplier Device Package
TO-263AA
Technology
MOSFET (Metal Oxide)
Power Dissipation (Max)
298W (Tc)
FET Type
P-Channel
FET Feature
-
Drain to Source Voltage (Vdss)
65 V
Current - Continuous Drain (Id) @ 25°C
120A (Tc)
Rds On (Max) @ Id, Vgs
10mOhm @ 500mA, 10V
Vgs(th) (Max) @ Id
4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
185 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds
13200 pF @ 25 V
Vgs (Max)
±15V
Drive Voltage (Max Rds On, Min Rds On)
10V
Package_case
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

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+86-755-82518276
+8615019224070, annies65, +8615118125813
568248857, 827259012, 316249462
+8615019224070, +8615118118839, +8615118125813
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IXYS
IXYS
IXYS Corporation is a global supplier of power management semiconductors with a comprehensive range of Power MOSFET, IGBT, bipolar, and mixed-signal IC solutions that provide improved efficiency and reduced energy costs in a ...
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