IXYS IXTA3N110
- IXTA3N110
- IXYS
- MOSFET N-CH 1100V 3A TO263
- Transistors - FETs, MOSFETs - Single
- IXTA3N110 Datasheet
- TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
- Tube
- Lead free / RoHS Compliant
- 3817
- Spot Inventory / Athorized Dstributor / Factory Excess Stock
- 1 year quality assurance 》
- Click to get rates
Part Number IXTA3N110 |
Category Transistors - FETs, MOSFETs - Single |
Manufacturer IXYS |
Description MOSFET N-CH 1100V 3A TO263 |
Package Tube |
Series - |
Operating Temperature -55°C ~ 150°C (TJ) |
Mounting Type Surface Mount |
Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
Supplier Device Package TO-263AA |
Technology MOSFET (Metal Oxide) |
Power Dissipation (Max) 150W (Tc) |
FET Type N-Channel |
FET Feature - |
Drain to Source Voltage (Vdss) 1100 V |
Current - Continuous Drain (Id) @ 25°C 3A (Tc) |
Rds On (Max) @ Id, Vgs 4Ohm @ 1.5A, 10V |
Vgs(th) (Max) @ Id 5V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs 42 nC @ 10 V |
Input Capacitance (Ciss) (Max) @ Vds 1350 pF @ 25 V |
Vgs (Max) ±20V |
Drive Voltage (Max Rds On, Min Rds On) 10V |
Package_case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
IXTA3N110 Guarantees
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IXYS
IXYS Corporation is a global supplier of power management semiconductors with a comprehensive range of Power MOSFET, IGBT, bipolar, and mixed-signal IC solutions that provide improved efficiency and reduced energy costs in a ...
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