IXYS IXTD1R4N60P 11
- IXTD1R4N60P 11
- IXYS
- MOSFET N-CH 600V 1.4A DIE
- Transistors - FETs, MOSFETs - Single
- IXTD1R4N60P 11 Datasheet
- Die
- Bulk
- Lead free / RoHS Compliant
- 1239
- Spot Inventory / Athorized Dstributor / Factory Excess Stock
- 1 year quality assurance 》
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Part Number IXTD1R4N60P 11 |
Category Transistors - FETs, MOSFETs - Single |
Manufacturer IXYS |
Description MOSFET N-CH 600V 1.4A DIE |
Package Bulk |
Series PolarHV™ |
Operating Temperature -55°C ~ 150°C (TJ) |
Mounting Type Surface Mount |
Package / Case Die |
Supplier Device Package Die |
Technology MOSFET (Metal Oxide) |
Power Dissipation (Max) 50W (Tc) |
FET Type N-Channel |
FET Feature - |
Drain to Source Voltage (Vdss) 600 V |
Current - Continuous Drain (Id) @ 25°C 1.4A (Tc) |
Rds On (Max) @ Id, Vgs 9Ohm @ 700mA, 10V |
Vgs(th) (Max) @ Id 5.5V @ 25µA |
Gate Charge (Qg) (Max) @ Vgs 5.2 nC @ 10 V |
Input Capacitance (Ciss) (Max) @ Vds 140 pF @ 25 V |
Vgs (Max) ±30V |
Drive Voltage (Max Rds On, Min Rds On) 10V |
Package_case Die |
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IXYS
IXYS Corporation is a global supplier of power management semiconductors with a comprehensive range of Power MOSFET, IGBT, bipolar, and mixed-signal IC solutions that provide improved efficiency and reduced energy costs in a ...
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