IXYS IXTH12N90
- IXTH12N90
- IXYS
- MOSFET N-CH 900V 12A TO247
- Transistors - FETs, MOSFETs - Single
- IXTH12N90 Datasheet
- TO-247-3
- Tube
- Lead free / RoHS Compliant
- 21355
- Spot Inventory / Athorized Dstributor / Factory Excess Stock
- 1 year quality assurance 》
- Click to get rates
Part Number IXTH12N90 |
Category Transistors - FETs, MOSFETs - Single |
Manufacturer IXYS |
Description MOSFET N-CH 900V 12A TO247 |
Package Tube |
Series MegaMOS™ |
Operating Temperature -55°C ~ 150°C (TJ) |
Mounting Type Through Hole |
Package / Case TO-247-3 |
Supplier Device Package TO-247 (IXTH) |
Technology MOSFET (Metal Oxide) |
Power Dissipation (Max) 300W (Tc) |
FET Type N-Channel |
FET Feature - |
Drain to Source Voltage (Vdss) 900 V |
Current - Continuous Drain (Id) @ 25°C 12A (Tc) |
Rds On (Max) @ Id, Vgs 900mOhm @ 6A, 10V |
Vgs(th) (Max) @ Id 4.5V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs 170 nC @ 10 V |
Input Capacitance (Ciss) (Max) @ Vds 4500 pF @ 25 V |
Vgs (Max) ±20V |
Drive Voltage (Max Rds On, Min Rds On) 10V |
Package_case TO-247-3 |
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IXYS
IXYS Corporation is a global supplier of power management semiconductors with a comprehensive range of Power MOSFET, IGBT, bipolar, and mixed-signal IC solutions that provide improved efficiency and reduced energy costs in a ...
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