IXTH1N200P3HV

IXYS IXTH1N200P3HV

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  • IXTH1N200P3HV
  • IXYS
  • MOSFET N-CH 2000V 1A TO247HV
  • Transistors - FETs, MOSFETs - Single
  • IXTH1N200P3HV Datasheet
  • TO-247-3 Variant
  • Tube
  • Lead free / RoHS CompliantLead free / RoHS Compliant
  • 4889
  • Spot Inventory / Athorized Dstributor / Factory Excess Stock
  • 1 year quality assurance 》
  • Click to get rates
Part Number
IXTH1N200P3HV
Category
Transistors - FETs, MOSFETs - Single
Manufacturer
IXYS
Description
MOSFET N-CH 2000V 1A TO247HV
Package
Tube
Series
-
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Through Hole
Package / Case
TO-247-3 Variant
Supplier Device Package
TO-247HV
Technology
MOSFET (Metal Oxide)
Power Dissipation (Max)
125W (Tc)
FET Type
N-Channel
FET Feature
-
Drain to Source Voltage (Vdss)
2000 V
Current - Continuous Drain (Id) @ 25°C
1A (Tc)
Rds On (Max) @ Id, Vgs
40Ohm @ 500mA, 10V
Vgs(th) (Max) @ Id
4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
23.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds
646 pF @ 25 V
Vgs (Max)
±20V
Drive Voltage (Max Rds On, Min Rds On)
10V
Package_case
TO-247-3 Variant

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+86-755-82518276
+8615019224070, annies65, +8615118125813
568248857, 827259012, 316249462
+8615019224070, +8615118118839, +8615118125813
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IXYS
IXYS
IXYS Corporation is a global supplier of power management semiconductors with a comprehensive range of Power MOSFET, IGBT, bipolar, and mixed-signal IC solutions that provide improved efficiency and reduced energy costs in a ...
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