IXTN660N04T4

IXYS IXTN660N04T4

The picture is for reference only, please refer to the product specification

  • IXTN660N04T4
  • IXYS
  • MOSFET N-CH 40V 660A SOT227B
  • Transistors - FETs, MOSFETs - Single
  • IXTN660N04T4 Datasheet
  • SOT-227-4, miniBLOC
  • Cut Tape (CT)
  • Lead free / RoHS CompliantLead free / RoHS Compliant
  • 20545
  • Spot Inventory / Athorized Dstributor / Factory Excess Stock
  • 1 year quality assurance 》
  • Click to get rates
Part Number
IXTN660N04T4
Category
Transistors - FETs, MOSFETs - Single
Manufacturer
IXYS
Description
MOSFET N-CH 40V 660A SOT227B
Package
Cut Tape (CT)
Series
TrenchT4™
Operating Temperature
-55°C ~ 175°C (TJ)
Mounting Type
Chassis Mount
Package / Case
SOT-227-4, miniBLOC
Supplier Device Package
SOT-227B
Technology
MOSFET (Metal Oxide)
Power Dissipation (Max)
1040W (Tc)
FET Type
N-Channel
FET Feature
Current Sensing
Drain to Source Voltage (Vdss)
40 V
Current - Continuous Drain (Id) @ 25°C
660A (Tc)
Rds On (Max) @ Id, Vgs
0.85mOhm @ 100A, 10V
Vgs(th) (Max) @ Id
4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
860 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds
44000 pF @ 25 V
Vgs (Max)
±15V
Drive Voltage (Max Rds On, Min Rds On)
10V
Package_case
SOT-227-4, miniBLOC

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IXYS
IXYS
IXYS Corporation is a global supplier of power management semiconductors with a comprehensive range of Power MOSFET, IGBT, bipolar, and mixed-signal IC solutions that provide improved efficiency and reduced energy costs in a ...
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