IXYS IXTT10P60
- IXTT10P60
- IXYS
- MOSFET P-CH 600V 10A TO268
- Transistors - FETs, MOSFETs - Single
- IXTT10P60 Datasheet
- TO-268-3, D³Pak (2 Leads + Tab), TO-268AA
- Tube
- Lead free / RoHS Compliant
- 4202
- Spot Inventory / Athorized Dstributor / Factory Excess Stock
- 1 year quality assurance 》
- Click to get rates
Part Number IXTT10P60 |
Category Transistors - FETs, MOSFETs - Single |
Manufacturer IXYS |
Description MOSFET P-CH 600V 10A TO268 |
Package Tube |
Series - |
Operating Temperature -55°C ~ 150°C (TJ) |
Mounting Type Surface Mount |
Package / Case TO-268-3, D³Pak (2 Leads + Tab), TO-268AA |
Supplier Device Package TO-268AA |
Technology MOSFET (Metal Oxide) |
Power Dissipation (Max) 300W (Tc) |
FET Type P-Channel |
FET Feature - |
Drain to Source Voltage (Vdss) 600 V |
Current - Continuous Drain (Id) @ 25°C 10A (Tc) |
Rds On (Max) @ Id, Vgs 1Ohm @ 5A, 10V |
Vgs(th) (Max) @ Id 5V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs 160 nC @ 10 V |
Input Capacitance (Ciss) (Max) @ Vds 4700 pF @ 25 V |
Vgs (Max) ±20V |
Drive Voltage (Max Rds On, Min Rds On) 10V |
Package_case TO-268-3, D³Pak (2 Leads + Tab), TO-268AA |
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