IXYS IXTY1R4N100P
- IXTY1R4N100P
- IXYS
- MOSFET N-CH 1000V 1.4A TO252
- Transistors - FETs, MOSFETs - Single
- IXTY1R4N100P Datasheet
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Tape & Reel (TR)
- Lead free / RoHS Compliant
- 14463
- Spot Inventory / Athorized Dstributor / Factory Excess Stock
- 1 year quality assurance 》
- Click to get rates
Part Number IXTY1R4N100P |
Category Transistors - FETs, MOSFETs - Single |
Manufacturer IXYS |
Description MOSFET N-CH 1000V 1.4A TO252 |
Package Tape & Reel (TR) |
Series Polar™ |
Operating Temperature -55°C ~ 150°C (TJ) |
Mounting Type Surface Mount |
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63 |
Supplier Device Package TO-252AA |
Technology MOSFET (Metal Oxide) |
Power Dissipation (Max) 63W (Tc) |
FET Type N-Channel |
FET Feature - |
Drain to Source Voltage (Vdss) 1000 V |
Current - Continuous Drain (Id) @ 25°C 1.4A (Tc) |
Rds On (Max) @ Id, Vgs 11Ohm @ 500mA, 10V |
Vgs(th) (Max) @ Id 4.5V @ 50µA |
Gate Charge (Qg) (Max) @ Vgs 17.8 nC @ 10 V |
Input Capacitance (Ciss) (Max) @ Vds 450 pF @ 25 V |
Vgs (Max) ±20V |
Drive Voltage (Max Rds On, Min Rds On) 10V |
Package_case TO-252-3, DPak (2 Leads + Tab), SC-63 |
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IXYS
IXYS Corporation is a global supplier of power management semiconductors with a comprehensive range of Power MOSFET, IGBT, bipolar, and mixed-signal IC solutions that provide improved efficiency and reduced energy costs in a ...
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