IXTY1R4N120PHV

IXYS IXTY1R4N120PHV

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  • IXTY1R4N120PHV
  • IXYS
  • MOSFET N-CH 1200V 1.4A TO252
  • Transistors - FETs, MOSFETs - Single
  • IXTY1R4N120PHV Datasheet
  • TO-252-3, DPak (2 Leads + Tab), SC-63
  • Cut Tape (CT)
  • Lead free / RoHS CompliantLead free / RoHS Compliant
  • 20102
  • Spot Inventory / Athorized Dstributor / Factory Excess Stock
  • 1 year quality assurance 》
  • Click to get rates
Part Number
IXTY1R4N120PHV
Category
Transistors - FETs, MOSFETs - Single
Manufacturer
IXYS
Description
MOSFET N-CH 1200V 1.4A TO252
Package
Cut Tape (CT)
Series
Polar™
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Surface Mount
Package / Case
TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package
TO-252AA
Technology
MOSFET (Metal Oxide)
Power Dissipation (Max)
86W (Tc)
FET Type
N-Channel
FET Feature
-
Drain to Source Voltage (Vdss)
1200 V
Current - Continuous Drain (Id) @ 25°C
1.4A (Tc)
Rds On (Max) @ Id, Vgs
13Ohm @ 700mA, 10V
Vgs(th) (Max) @ Id
4.5V @ 100µA
Gate Charge (Qg) (Max) @ Vgs
24.8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds
666 pF @ 25 V
Vgs (Max)
±30V
Drive Voltage (Max Rds On, Min Rds On)
10V
Package_case
TO-252-3, DPak (2 Leads + Tab), SC-63

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IXYS
IXYS
IXYS Corporation is a global supplier of power management semiconductors with a comprehensive range of Power MOSFET, IGBT, bipolar, and mixed-signal IC solutions that provide improved efficiency and reduced energy costs in a ...
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