MBR200200CT

GeneSiC Semiconductor MBR200200CT

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  • MBR200200CT
  • GeneSiC Semiconductor
  • DIODE SCHOTTKY 200V 100A 2 TOWER
  • Diodes - Rectifiers - Arrays
  • MBR200200CT Datasheet
  • Twin Tower
  • Bulk
  • Lead free / RoHS CompliantLead free / RoHS Compliant
  • 8794
  • Spot Inventory / Athorized Dstributor / Factory Excess Stock
  • 1 year quality assurance 》
  • Click to get rates
Part Number
MBR200200CT
Category
Diodes - Rectifiers - Arrays
Manufacturer
GeneSiC Semiconductor
Description
DIODE SCHOTTKY 200V 100A 2 TOWER
Package
Bulk
Series
-
Mounting Type
Chassis Mount
Package / Case
Twin Tower
Supplier Device Package
Twin Tower
Diode Type
Schottky
Voltage - Forward (Vf) (Max) @ If
920 mV @ 100 A
Current - Reverse Leakage @ Vr
3 mA @ 200 V
Diode Configuration
1 Pair Common Cathode
Voltage - DC Reverse (Vr) (Max)
200 V
Current - Average Rectified (Io) (per Diode)
100A
Speed
Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr)
-
Operating Temperature - Junction
-55°C ~ 150°C
Package_case
Twin Tower

MBR200200CT Guarantees

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