ON Semiconductor MJD112T4G
- MJD112T4G
- ON Semiconductor
- TRANS NPN DARL 100V 2A DPAK
- Transistors - Bipolar (BJT) - Single
- MJD112T4G Datasheet
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Cut Tape (CT)
- Lead free / RoHS Compliant
- 13343
- Spot Inventory / Athorized Dstributor / Factory Excess Stock
- 1 year quality assurance 》
- Click to get rates
Part Number MJD112T4G |
Category Transistors - Bipolar (BJT) - Single |
Manufacturer ON Semiconductor |
Description TRANS NPN DARL 100V 2A DPAK |
Package Cut Tape (CT) |
Series - |
Operating Temperature -65°C ~ 150°C (TJ) |
Mounting Type Surface Mount |
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63 |
Supplier Device Package DPAK |
Power - Max 20 W |
Transistor Type NPN - Darlington |
Current - Collector (Ic) (Max) 2 A |
Voltage - Collector Emitter Breakdown (Max) 100 V |
Vce Saturation (Max) @ Ib, Ic 3V @ 40mA, 4A |
Current - Collector Cutoff (Max) 20µA |
DC Current Gain (hFE) (Min) @ Ic, Vce 1000 @ 2A, 3V |
Frequency - Transition 25MHz |
Package_case TO-252-3, DPak (2 Leads + Tab), SC-63 |
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