Micron Technology Inc. MT53D768M64D8JS-053 WT:D TR
- MT53D768M64D8JS-053 WT:D TR
- Micron Technology Inc.
- IC DRAM 48GBIT 1866MHZ 366VFBGA
- General Memory
- MT53D768M64D8JS-053 WT:D TR Datasheet
- 366-VFBGA
- Tape & Reel (TR)
-
Lead free / RoHS Compliant - 28418
- Spot Inventory / Athorized Dstributor / Factory Excess Stock
- 1 year quality assurance 》
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What is MT53D768M64D8JS-053 WT:D TR
Micron Technology Inc. Part Number MT53D768M64D8JS-053 WT:D TR(General Memory), developed and manufactured by Micron Technology Inc., distributed globally by Jinftry. We distribute various electronic components from world-renowned brands and provide one-stop services, making us a trusted global electronic component distributor.
MT53D768M64D8JS-053 WT:D TR is one of the part numbers distributed by Jinftry, and you can learn about its specifications/configurations, package/case, Datasheet, and other information here. Electronic components are affected by supply and demand, and prices fluctuate frequently. If you have a demand, please do not hesitate to send us an RFQ or email us immediately [email protected] Please inquire about the real-time unit price, Data Code, Lead time, payment terms, and any other information you would like to know. We will do our best to provide you with a quotation and reply as soon as possible.
MT53D768M64D8JS-053 WT:D TR Specifications
- Part NumberMT53D768M64D8JS-053 WT:D TR
- CategoryGeneral Memory
- ManufacturerMicron Technology Inc.
- DescriptionIC DRAM 48GBIT 1866MHZ 366VFBGA
- PackageTape & Reel (TR)
- Series-
- Voltage - Supply1.1V
- Operating Temperature-30°C ~ 85°C (TC)
- Mounting TypeSurface Mount
- Package / Case366-VFBGA
- Supplier Device Package366-VFBGA (12x12.7)
- Memory Size48Gb (768M x 64)
- TechnologySDRAM - Mobile LPDDR4
- Memory TypeVolatile
- Clock Frequency1.866 GHz
- Access Time-
- Memory FormatDRAM
- Write Cycle Time - Word, Page-
- Memory Interface-
Application of MT53D768M64D8JS-053 WT:D TR
MT53D768M64D8JS-053 WT:D TR Datasheet
MT53D768M64D8JS-053 WT:D TR Datasheet , Tape & Reel (TR),1.1V,-30°C ~ 85°C (TC),Surface Mount,366-VFBGA,366-VFBGA (12x12.7),48Gb (768M x 64),SDRAM - Mobile LPDDR4,Volatile,1.866 GHz,DRAM
MT53D768M64D8JS-053 WT:D TR Classification
General Memory
FAQ about General Memory
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1. How to measure the data read and write speed of memory?
The read and write speed of memory is usually expressed in MB/s or GB/s, reflecting the amount of data it processes per second. The faster the speed, the higher the data transmission efficiency.
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2. How to extend the life of memory devices?
Measures such as regular data backup, avoiding excessive reading and writing of memory, ensuring proper temperature control, and preventing power fluctuations can help extend the life of memory.
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3. What is High Bandwidth Memory (HBM) and what are its advantages?
HBM is a high-bandwidth, low-latency memory technology commonly used in graphics cards and AI accelerators that can handle a large number of parallel computing tasks. HBM's stacked architecture makes it take up less space and more efficient, making it an ideal choice for big data and high-performance computing applications.
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