ON Semiconductor NDD03N80Z-1G
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- NDD03N80Z-1G
- ON Semiconductor
- MOSFET N-CH 800V 2.9A IPAK
- Transistors - FETs, MOSFETs - Single
- NDD03N80Z-1G Datasheet
- TO-251-3 Short Leads, IPak, TO-251AA
- Tape & Reel (TR)
-
Lead free / RoHS Compliant - 1429
- Spot Inventory / Athorized Dstributor / Factory Excess Stock
- 1 year quality assurance 》
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| Part Number NDD03N80Z-1G |
| Category Transistors - FETs, MOSFETs - Single |
| Manufacturer ON Semiconductor |
| Description MOSFET N-CH 800V 2.9A IPAK |
| Package Tape & Reel (TR) |
| Series - |
| Operating Temperature -55°C ~ 150°C (TJ) |
| Mounting Type Through Hole |
| Package / Case TO-251-3 Short Leads, IPak, TO-251AA |
| Supplier Device Package I-Pak |
| Technology MOSFET (Metal Oxide) |
| Power Dissipation (Max) 96W (Tc) |
| FET Type N-Channel |
| FET Feature - |
| Drain to Source Voltage (Vdss) 800 V |
| Current - Continuous Drain (Id) @ 25°C 2.9A (Tc) |
| Rds On (Max) @ Id, Vgs 4.5Ohm @ 1.2A, 10V |
| Vgs(th) (Max) @ Id 4.5V @ 50µA |
| Gate Charge (Qg) (Max) @ Vgs 17 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds 440 pF @ 25 V |
| Vgs (Max) ±30V |
| Drive Voltage (Max Rds On, Min Rds On) 10V |
| Package_case TO-251-3 Short Leads, IPak, TO-251AA |
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