NE85639-T1-A

CEL NE85639-T1-A

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  • NE85639-T1-A
  • CEL
  • RF TRANS NPN 12V 9GHZ SOT143
  • Transistors - Bipolar (BJT) - RF
  • NE85639-T1-A Datasheet
  • TO-253-4, TO-253AA
  • Cut Tape (CT)
  • Lead free / RoHS CompliantLead free / RoHS Compliant
  • 3026
  • Spot Inventory / Athorized Dstributor / Factory Excess Stock
  • 1 year quality assurance 》
  • Click to get rates
Part Number
NE85639-T1-A
Category
Transistors - Bipolar (BJT) - RF
Manufacturer
CEL
Description
RF TRANS NPN 12V 9GHZ SOT143
Package
Cut Tape (CT)
Series
-
Operating Temperature
150°C (TJ)
Mounting Type
Surface Mount
Package / Case
TO-253-4, TO-253AA
Supplier Device Package
SOT-143
Gain
13dB
Power - Max
200mW
Transistor Type
NPN
Current - Collector (Ic) (Max)
100mA
Voltage - Collector Emitter Breakdown (Max)
12V
DC Current Gain (hFE) (Min) @ Ic, Vce
50 @ 20mA, 10V
Frequency - Transition
9GHz
Noise Figure (dB Typ @ f)
1.1dB @ 1GHz
Package_case
TO-253-4, TO-253AA

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