NP80N04PDG-E1B-AY

Renesas Electronics America Inc NP80N04PDG-E1B-AY

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  • NP80N04PDG-E1B-AY
  • Renesas Electronics America Inc
  • MOSFET N-CH 40V 80A TO263-3
  • Transistors - FETs, MOSFETs - Single
  • NP80N04PDG-E1B-AY Datasheet
  • TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
  • Bulk
  • Lead free / RoHS CompliantLead free / RoHS Compliant
  • 2042
  • Spot Inventory / Athorized Dstributor / Factory Excess Stock
  • 1 year quality assurance 》
  • Click to get rates
Part Number
NP80N04PDG-E1B-AY
Category
Transistors - FETs, MOSFETs - Single
Manufacturer
Renesas Electronics America Inc
Description
MOSFET N-CH 40V 80A TO263-3
Package
Bulk
Series
-
Operating Temperature
175°C (TJ)
Mounting Type
Surface Mount
Package / Case
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Supplier Device Package
TO-263-3
Technology
MOSFET (Metal Oxide)
Power Dissipation (Max)
1.8W (Ta), 115W (Tc)
FET Type
N-Channel
FET Feature
-
Drain to Source Voltage (Vdss)
40 V
Current - Continuous Drain (Id) @ 25°C
80A (Tc)
Rds On (Max) @ Id, Vgs
4.5mOhm @ 40A, 10V
Vgs(th) (Max) @ Id
2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
135 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds
6.9 pF @ 25 V
Vgs (Max)
-
Drive Voltage (Max Rds On, Min Rds On)
-
Package_case
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

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Renesas Electronics America Inc
Renesas Electronics America Inc
Renesas Electronics is a semiconductor company with an outstanding portfolio of global market-leading products. Renesas has the technology and capabilities to deliver almost everything required in an age focusing on human needs, including ...
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